CEB6030LS2 transistor equivalent, n-channel logic level enhancement mode field effect transistor.
30V , 52A , RDS(ON)=13.5m Ω
@VGS=10V.
RDS(ON)=20m Ω
@VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
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